v30120c, vi30120c www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 89160 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.50 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: to-220ab and to-262aa ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs max. primary characteristics i f(av) 2 x 15 a v rrm 120 v i fsm 150 a v f at i f = 15 a 0.68 v t j max. 150 c package to-220ab, to-262aa diode variation common cathode pin 1 pin 2 pin 3 k vi30120c to-220ab v30120c 1 2 3 pin 1 pin 2 case pin 3 tmbs ? 1 k 2 3 to-262aa maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v30120c vi30120c unit max. repetitive pe ak reverse voltage v rrm 120 v max. average forward rectified current (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 150 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
v30120c, vi30120c www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 89160 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) aec-q101 qualified ? ? ? ? ratings and characteristics curves ? (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.56 - v i f = 7.5 a 0.71 - i f = 15 a 0.86 0.97 i f = 5 a t a = 125 c 0.50 - i f = 7.5 a 0.60 - i f = 15 a 0.68 0.76 reverse current per diode v r = 90 v t a = 25 c i r (2) 11 - a t a = 125 c 8 - ma v r = 120 v t a = 25 c - 800 a t a = 125 c 17 50 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v30120c vi30120c unit typical thermal resistance per diode r ? jc 2.2 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab v30120c-m3/4w 1.89 4w 50/tube tube to-262aa vi30120c-m3/4w 1.45 4w 50/tube tube to-220ab v30120chm3/4w (1) 1.89 4w 50/tube tube to-262aa vi30120chm3/4w (1) 1.45 4w 50/tube tube case temperature (c) average forward rectified current (a) 40 35 25 15 5 0 0 25 50 75 100 125 150 175 resistive or inductive load mounted on specific heatsink 30 20 10 0 2 6 10 14 18 0246 14 18 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 12 4 8 12 16 10 16 8 d = t p /t t p t
v30120c, vi30120c www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 89160 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode instantaneous forward current (a) instantaneous forward voltage (v) 0 0.2 0.4 0.8 1.2 1.6 100 10 1 0.1 t a = 125 c t a = 100 c t a = 25 c 0.6 1.0 1.4 t a = 150 c 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 10 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) 100 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 10 1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case
v30120c, vi30120c www.vishay.com vishay general semiconductor revision: 16-aug-13 4 document number: 89160 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) ? to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37)
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